Toyota Tsusho has been granted a patent for a method to manufacture silicon carbide (SiC) substrates. The process involves simultaneous growth and etching of the substrate surfaces within a heated main container, utilizing vapor pressures of silicon and carbon species to facilitate layer formation and etching while minimizing substrate deformation. GlobalData’s report on Toyota Tsusho gives a 360-degree view of the company including its patenting strategy. Buy the report here.
According to GlobalData’s company profile on Toyota Tsusho, Finite element simulation was a key innovation area identified from patents. Toyota Tsusho's grant share as of July 2024 was 30%. Grant share is based on the ratio of number of grants to total number of patents.
Method for manufacturing sic substrates with simultaneous growth and etching
The patent US12065758B2 outlines a method for manufacturing silicon carbide (SiC) substrates that involves simultaneous growth and etching processes. The method entails forming a growth layer on one surface of a SiC base substrate while etching the opposite surface. This dual process occurs within a main container that generates vapor pressure of gaseous species containing silicon (Si) and carbon (C). A temperature gradient is established within the container, facilitating the transport of these gaseous species to the respective surfaces of the SiC substrate. The growth layer is formed on the lower temperature side, while etching occurs on the higher temperature side, utilizing the temperature gradient as a driving force for both processes.
The claims further specify conditions for the growth and etching processes, including the maintenance of vapor pressure and the arrangement of the SiC substrate relative to the temperature gradient. The patent also addresses the doping concentration of the growth layer, allowing it to be equal to, lower than, or higher than that of the SiC base substrate. Additionally, the method emphasizes the importance of an environment where air is evacuated, ensuring optimal conditions for the growth and etching processes. The resulting SiC substrate produced by this method is also claimed, highlighting its potential applications in various semiconductor technologies.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
