Toyota Tsusho. has filed a patent for a method to evaluate large diameter SiC substrates using an electron beam at an incident angle of 10° or less. This innovative approach aims to enhance the evaluation process for silicon carbide substrates. GlobalData’s report on Toyota Tsusho gives a 360-degree view of the company including its patenting strategy. Buy the report here.
According to GlobalData’s company profile on Toyota Tsusho, Finite element simulation was a key innovation area identified from patents. Toyota Tsusho's grant share as of January 2024 was 18%. Grant share is based on the ratio of number of grants to total number of patents.
Evaluation method for large diameter sic substrate using electron beam
A patent application (Publication Number: US20230411225A1) discloses a method for evaluating a silicon carbide substrate using electron beam imaging. The method involves acquiring an image by directing the electron beam at an incident angle of 10° or less with respect to the {0001} plane of the substrate. Additionally, the method includes an oxide film removal step before image acquisition, with the substrate exposed to ambient air for a limited time post-oxide film removal.
Furthermore, the method involves analyzing the acquired image, which contains brightness information reflecting the stacking direction of atoms on the substrate. The comparison of brightness information allows for the evaluation of different stacking directions present on the silicon carbide substrate. The method also specifies parameters such as the direction of the electron beam, acceleration voltage, and the diameter of the substrate to ensure accurate evaluation. Overall, this method provides a systematic approach to assess silicon carbide substrates, crucial for various applications in the semiconductor industry.
To know more about GlobalData’s detailed insights on Toyota Tsusho, buy the report here.
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